| Mfg Part Number: 82S23 BFA | Alternate P/N: 82S23BFA | Manufacturer: Philips Semiconductors Inc |
| NSN : 5962-01-310-8699 | Item Name : microcircuit memory | CAGE Code : 18324 |
| FSC : 5962 Microcircuits Electronic |
Thank you for your interest in NSN 5962-01-310-8699 manufactured by Philips Semiconductors Inc. The particular NSN product you are looking for is listed alongside the part number 82S23 BFA, and is described as Microcircuit Memory. As we have this item available, we invite you to request a quote for your comparisons by filling out our RFQ form below. Once you have completed our form, we ask that you provide us with details regarding target prices, quantities, and expected shipping time frame. In this way, we can provide you with a quote that meets your specifications and requirements.
Beyond NSN 5962-01-310-8699 manufactured under CAGE Code 18324, and other various Philips Semiconductors Inc parts, Acquire NSN has a stock inventory of over 2 billion new, used, obsolete, and hard-to-find NSN parts 82S23 BFA that work to meet the needs of a variety of industry verticals and applications. Acquire NSN operates under AS9120B and ISO 9001:2015 certification and FAA AC 00-56B accreditation to ensure the quality and authenticity of our offerings. We have developed an interface that simplifies the purchasing process with rapid response times for the industries we serve. Get started on the procurement process today and see why customers steadily rely on Acquire NSN for all their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-310-8699 Item Description: Microcircuit Memory | 5962 | 013108699 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 82s23 Bfa | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.285 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 332.8 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | F-5 MIL-M-38510 |
| CZER | MEMORY DEVICE TYPE | ROM |
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